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MA3X786E - Silicon epitaxial planar type

Key Features

  • 1 3 2 + 0.2 0.95 1.45 0 to 0.1 1.1.
  • 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Double.
  • 2 Single Double.
  • 2 IFSM Tj Tstg IF(AV) Symbol VR VRRM IFM Rating 30 30 300 200 100 70 1 125.
  • 55 to +125 A °C °C mA Unit V V mA 0.1 to 0.3 0.4 ± 0.2 1 : Anode 1 2 : Anode 2 JEDEC : TO-236 3 : Cathode 1, 2 EIAJ : SC-59A Mini Type Package(3-pin) Marking Symbol: M3Z Intern.

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Datasheet Details

Part number MA3X786E
Manufacturer Panasonic
File Size 46.58 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3X786E Datasheet

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Schottky Barrier Diodes (SBD) MA3X786E Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification • Two MA3X786s are contained in one package (cathode common) • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency 2.9 − 0.05 2.8 0.65 ± 0.15 + 0.2 − 0.3 + 0.25 1.5 − 0.05 0.65 ± 0.15 0.95 1.9 ± 0.2 I Features 1 3 2 + 0.2 0.95 1.45 0 to 0.1 1.1 −0.