The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Schottky Barrier Diodes (SBD)
MA3X789
Silicon epitaxial planar type
For super-high speed switching circuit For small current rectification I Features
• Allowing to rectify under (IF(AV) = 200 mA) condition • Reverse voltage VR (DC value) = 60 V guaranteed
2.9 − 0.05
+ 0.2
2.8 − 0.3 0.65 ± 0.15 1.5
+ 0.2
Unit : mm
0.65 ± 0.15
+ 0.25 − 0.05
0.95
1.9 ± 0.2
1 3 2
0.95
1.45 0 to 0.1
Reverse voltage (DC) Peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
VR VRM IF(AV) IFSM Tj Tstg
60 60 500 2 125 −55 to +125
V V mA A °C °C
0.1 to 0.3 0.4 ± 0.2
1.1
0.
MA3X789 Datasheet
