Datasheet Details
| Part number | PDB4854S |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 551.96 KB |
| Description | Dual N-Channel MOSFET |
| Download | PDB4854S Download (PDF) |
|
|
| Part number | PDB4854S |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 551.96 KB |
| Description | Dual N-Channel MOSFET |
| Download | PDB4854S Download (PDF) |
|
|
|
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Preliminary datasheet 40V Dual N-Channel MOSFETs PDB4854S General.
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