Datasheet4U Logo Datasheet4U.com

PDB4854S - Dual N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V,4.3A, RDS(ON) =39mΩ @VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available DFN2X2 Dual 2EP Pin Configuration D1 G2 ˙ S2 S1 G1 D2 D1 G1 G2 S1.

📥 Download Datasheet

Datasheet Details

Part number PDB4854S
Manufacturer Potens semiconductor
File Size 551.96 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet PDB4854S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PDB-C107 Blue Enhanced Photoconductive Silicon Photodiode Advanced Photonix
PDB-C109 Blue Enhanced Photoconductive Silicon Photodiode Advanced Photonix
PDB-C110 Blue Enhanced Photoconductive Silicon Photodiode Advanced Photonix
PDB-C113 Blue Enhanced Photoconductive Silicon Photodiode Advanced Photonix
PDB-C120 Silicon Photodiode ETC

Other Datasheets by Potens semiconductor

Part Number Description
PDB0854S Dual N-Channel MOSFET
PDB2116M N+P Dual Channel MOSFETs
PDB2116S N+P Dual Channel MOSFET
PDB2216S Dual N-Channel MOSFET
PDB2309L P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
Preliminary datasheet 40V Dual N-Channel MOSFETs PDB4854S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 40V RDSON 39m ID 4.3A Features  40V,4.
Published: |