PDB4854S Datasheet | Potens semiconductor

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 40V RDSON 39m ID 4.3A Features - 40V,4.3A, RDS(ON) =39mΩ @VGS = 10V - Improved dv/dt capability - Fast switching - Green Device Available DFN2X2 Dual 2EP Pin Configuration D1 G2 ˙ S2 S1 G1 D2 D1 G1 G2 S1 Applications D2 - Networking - Load Switch - LED applications S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TA=25℃) Drain Current - Continuous (TA=70℃) Drain Current -...