PDN001N60S Datasheet | Potens semiconductor

Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 600V RDSON 160 Features - Improved dv/dt capability - Fast switching - Green Device Available ID 0.1A SOT23-3S Pin Configuration Applications - High efficient switched mode power supplies - TV Power - Adapter/charger - LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain Current - Pulsed1 Power Dissipation (TC=25℃) Power...