PDN02P15S Datasheet | Potens semiconductor

Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration BVDSS -150V RDSON 750m ID -1A Features - -150V,-1A, RDS(ON) =750mΩ@VGS = -10V - Improved dv/dt capability - Fast switching - Green Device Available Applications - Networking - Load Switch - LED applications S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain Current - Pulsed1 Power Dissipation (TC=25℃)...