PDN0954S Datasheet | Potens semiconductor

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. SOT23S Pin Configuration BVDSS 100V RDSON 350m ID 1.4A Features - 100V,1.4A , RDS(ON)=350mΩ@VGS=10V - Improved dv/dt capability - Fast switching - Green Device Available Applications - Networking - Load Switch - LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TA=25℃) Drain Current - Continuous (TA=70℃) Drain Current - Pulsed1 Power Dissipation (TA=25℃) Power Dissipation -...