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PDN0954S - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 100V,1.4A , RDS(ON)=350mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet preview – PDN0954S

Datasheet Details

Part number PDN0954S
Manufacturer Potens semiconductor
File Size 680.61 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDN0954S Datasheet
Additional preview pages of the PDN0954S datasheet.

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Full PDF Text Transcription

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100V N-Channel MOSFETs PDN0954S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23S Pin Configuration D D S G G S BVDSS 100V RDSON 350m ID 1.4A Features  100V,1.
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