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PDN0910S - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 100V,2A, RDS(ON) =200mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed App.
  • licGaretieonnDsevice Available.
  • Networking.
  • Load Switch.
  • LED.

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Datasheet preview – PDN0910S

Datasheet Details

Part number PDN0910S
Manufacturer Potens semiconductor
File Size 468.99 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDN0910S Datasheet
Additional preview pages of the PDN0910S datasheet.

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Full PDF Text Transcription

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100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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