PDN0910S
PDN0910S is N-Channel MOSFETs manufactured by Potens semiconductor.
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
BVDSS 100V
RDSON 200m
ID 2A
Features
- 100V,2A, RDS(ON) =200mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
App- lic Garetieonn Dsevice Available
- Networking
- Load Switch
- LED applications
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous (TC=25℃) Drain Current
- Continuous (TC=100℃) Drain Current
- Pulsed1 Power Dissipation (TC=25℃) Power...
