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RBA250N10CHPF-4UA02 - N-Channel Power MOSFET

Datasheet Summary

Description

The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 2.4 m MAX. ( VGS = 10 V, ID = 125A ).
  • Low input capacitance Ciss = 9500pF TYP. ( VDS = 50 V ).
  • Designed for automotive.

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Datasheet Details

Part number RBA250N10CHPF-4UA02
Manufacturer Renesas
File Size 660.23 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RBA250N10CHPF-4UA02 Datasheet
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Full PDF Text Transcription

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RBA250N10CHPF-4UA02 RBA250N10CHPF-4UA02 100V – 250A – N-channel Power MOS FET Application : Automotive Data Sheet R07DS1488EJ0100 Rev.1.00 Jul. 08, 2020 Description The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.4 m MAX. ( VGS = 10 V, ID = 125A ) • Low input capacitance Ciss = 9500pF TYP. ( VDS = 50 V ) • Designed for automotive application and AEC-Q101 qualified • Pb-free (This product does not contain Pb in the external electrode) Ordering Information Part No. RBA250N10CHPF-4UA02#GB0 Quantity 800pcs/reel Taping Shipping container Outline 8 G1 D2 3S 4S 5S 6S 7S 1. Gate 2. Drain 3, 4, 5, 6, 7. Source 8.
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