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RBA300N10EHPF-5UA02 - N-Channel Power MOSFET

Datasheet Summary

Description

Renesas TOLG technology

Features

  • ultra compact, gullwing leads designs for compatible with the footprint to the TOLL, enhanced thermal performance, management, and higher thermal cycling on board performance. Renesas new split gate technology provide suitable for use in low RDS(on) and switching capability for high power & high-frequency.

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Datasheet preview – RBA300N10EHPF-5UA02

Datasheet Details

Part number RBA300N10EHPF-5UA02
Manufacturer Renesas
File Size 367.64 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RBA300N10EHPF-5UA02 Datasheet
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Full PDF Text Transcription

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Datasheet RBA300N10EHPF-5UA02 REXFET-1 N-Channel Power MOSFET 100V - 340A - 1.5m R07DS1574EJ0100 Rev.1.00 Nov.08.2024 Description Renesas TOLG technology features ultra compact, gullwing leads designs for compatible with the footprint to the TOLL, enhanced thermal performance, management, and higher thermal cycling on board performance. Renesas new split gate technology provide suitable for use in low RDS(on) and switching capability for high power & high-frequency application. Features • Standard level gate drive voltage : VGS(th) = 2.0~4.0V • Super Low on-state resistance : RDS(on) = 1.5m Max.
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