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RJK5036DP3-A0 - MOS FET

Description

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Features

  • Low on-resistance RDS(on) = 3.83  typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C).
  • Low drive current.
  • High density mounting R07DS0840EJ0100 Rev.1.00 Jul 05, 2011 Outline.

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Full PDF Text Transcription

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Preliminary Datasheet RJK5036DP3-A0 500V - 2.4A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 3.83  typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting R07DS0840EJ0100 Rev.1.00 Jul 05, 2011 Outline RENESAS Package code: PRSP0004ZB-A Package name: SOT-223 D 4 3 2 1 S G 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel temperature Storage temperature Symbol VDSS VGSS Note1 ID ID (pulse) Note1 IDR Note2 IDR (pulse) Tch Tstg Note2 Ratings 500 ±30 2.4 4.8 2.4 4.8 150 –55 to +150 Unit V V A A A A C C Notes: 1.
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