RQJ0201UGDQA Overview
RQJ0201UGDQA Silicon P Channel MOS FET Power Switching.
RQJ0201UGDQA Key Features
- Low on-resistance RDS(on) = 53 mΩ typ (VGS = -4.5 V, ID = -1.8 A)
- Low drive current
- High speed switching
- 2.5 V gate drive
RQJ0201UGDQA Datasheet Details
| Part number | RQJ0201UGDQA |
|---|---|
| Datasheet | RQJ0201UGDQA-Renesas.pdf |
| File Size | 123.19 KB |
| Manufacturer | Renesas |
| Description | Silicon P-Channel MOS FET |
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