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RQJ0201UGDQA Datasheet Silicon P-Channel MOS FET

Manufacturer: Renesas

Overview

RQJ0201UGDQA Silicon P Channel MOS FET Power Switching.

Key Features

  • Low on-resistance RDS(on) = 53 mΩ typ (VGS =.
  • 4.5 V, ID =.
  • 1.8 A).
  • Low drive current.
  • High speed switching.
  • 2.5 V gate drive Outline.