RQJ0203WGDQA Description
RQJ0203WGDQA Silicon P Channel MOS FET Power Switching.
RQJ0203WGDQA Key Features
- Low on-resistance RDS(on) = 142 mΩ typ (VGS = -4.5 V, ID = -1.1 A)
- Low drive current
- High speed switching
- 2.5 V gate drive
- Part: RQJ0203WGDQA
- Manufacturer: Renesas
- Size: 123.25 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| RQJ0201UGDQA | Silicon P-Channel MOS FET |
| RQJ0202VGDQA | Silicon P Channel MOS FET Power Switching |
| RQJ0204XGDQA | Silicon P-Channel MOS FET |
| RQJ0301HGDQS | Silicon P-Channel MOS FET |
| RQJ0302NGDQA | Silicon P-Channel MOS FET |