RQJ0203WGDQA Overview
RQJ0203WGDQA Silicon P Channel MOS FET Power Switching.
RQJ0203WGDQA Key Features
- Low on-resistance RDS(on) = 142 mΩ typ (VGS = -4.5 V, ID = -1.1 A)
- Low drive current
- High speed switching
- 2.5 V gate drive
RQJ0203WGDQA Datasheet Details
| Part number | RQJ0203WGDQA |
|---|---|
| Datasheet | RQJ0203WGDQA-Renesas.pdf |
| File Size | 123.25 KB |
| Manufacturer | Renesas |
| Description | Silicon P-Channel MOS FET |
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