RQJ0204XGDQA Overview
RQJ0204XGDQA Silicon P Channel MOS FET Power Switching.
RQJ0204XGDQA Key Features
- Low on-resistance RDS(on) = 219 mΩ typ (VGS = -4.5 V, ID = -0.8 A)
- Low drive current
- High speed switching
- 2.5 V gate drive
RQJ0204XGDQA Datasheet Details
| Part number | RQJ0204XGDQA |
|---|---|
| Datasheet | RQJ0204XGDQA-Renesas.pdf |
| File Size | 123.47 KB |
| Manufacturer | Renesas |
| Description | Silicon P-Channel MOS FET |
|
|