Datasheet Summary
Silicon P Channel MOS FET Power Switching
Features
- Low on-resistance RDS(on) = 158 mΩ typ (VGS =
- 10 V, ID =
- 0.9 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
1 2
Note: Marking is “LG”.
Preliminary Datasheet
R07DS0300EJ0600 Rev.6.00
Jan 10, 2014
3 D
G 1. Source 2 2. Gate
3. Drain S...