RQJ0602EGDQS Description
RQJ0602EGDQS Silicon P Channel MOS FET Power Switching.
RQJ0602EGDQS Key Features
- Low on-resistance RDS(on) = 485 mΩ typ (VGS = -10 V, ID = -0.75 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
- UPAK is a trademark of Renesas Technology Corp