RQJ0601DGDQS Description
RQJ0601DGDQS Silicon P Channel MOS FET Power Switching.
RQJ0601DGDQS Key Features
- Low on-resistance RDS(on) = 124 mΩ typ (VGS = -10 V, ID = -1.4 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
- UPAK is a trademark of Renesas Technology Corp