RQJ0603LGDQA Overview
RQJ0603LGDQA Silicon P Channel MOS FET Power Switching.
RQJ0603LGDQA Key Features
- Low on-resistance RDS(on) = 158 mΩ typ (VGS = -10 V, ID = -0.9 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
RQJ0603LGDQA Datasheet Details
| Part number | RQJ0603LGDQA |
|---|---|
| Datasheet | RQJ0603LGDQA-Renesas.pdf |
| File Size | 125.25 KB |
| Manufacturer | Renesas |
| Description | Silicon P-Channel MOS FET |
|
|