RQJ0602EGDQA Description
RQJ0602EGDQA Silicon P Channel MOS FET Power Switching.
RQJ0602EGDQA Key Features
- Low on-resistance RDS(on) = 490 mΩ typ (VGS = -10 V, ID = -0.55 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
- Part: RQJ0602EGDQA
- Manufacturer: Renesas
- Size: 120.58 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| RQJ0602EGDQS | Silicon P-Channel MOS FET |
| RQJ0601DGDQS | Silicon P-Channel MOS FET |
| RQJ0603LGDQA | Silicon P Channel MOS FET Power Switching |
| RQJ0603LGDQA | Silicon P-Channel MOS FET |
| RQJ0201UGDQA | Silicon P-Channel MOS FET |