RQJ0602EGDQA Overview
RQJ0602EGDQA Silicon P Channel MOS FET Power Switching.
RQJ0602EGDQA Key Features
- Low on-resistance RDS(on) = 490 mΩ typ (VGS = -10 V, ID = -0.55 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
RQJ0602EGDQA Datasheet Details
| Part number | RQJ0602EGDQA |
|---|---|
| Datasheet | RQJ0602EGDQA-Renesas.pdf |
| File Size | 120.58 KB |
| Manufacturer | Renesas |
| Description | Silicon P-Channel MOS FET |
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