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UPA2806 - MOS FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications.

Features

  • Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A).
  • Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS = 0 V, f = 1 MHz).
  • Built-in gate protection diode.
  • Thin type surface mount package with heat spreader (8-pin HVSON).
  • RoHS Compliant Ordering Information Part No. LEAD.

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Datasheet Details

Part number UPA2806
Manufacturer Renesas
File Size 251.54 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet UPA2806 Datasheet
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Full PDF Text Transcription

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Preliminary Data Sheet μ PA2806 MOS FIELD EFFECT TRANSISTOR Description R07DS0008EJ0100 Rev.1.00 June 01, 2010 The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A) • Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS = 0 V, f = 1 MHz) • Built-in gate protection diode • Thin type surface mount package with heat spreader (8-pin HVSON) • RoHS Compliant Ordering Information Part No. LEAD PLATING Pure Sn (Tin) PACKING Tape 3000 p/reel Package 8-pin HVSON (3333) typ. 0.028 g μ PA2806T1L-E1-AY μ PA2806T1L-E2-AY ∗1 ∗1 Note: ∗1. Pb-free (This product does not contain Pb in external electrode.
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