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UPA2815T1S - P-channel MOSFEF

General Description

The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

Key Features

  • VDSS =.
  • 30 V (TA = 25°C).
  • Low on-state resistance ⎯ RDS(on) = 11 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 21 A).
  • 4.5 V Gate-drive available.
  • Small & thin type surface mount package with heat spreader.
  • Pb-free and Halogen free HWSON-8 Ordering Information Part No. Lead Plating Pure Sn Packing Tape 5000 p/reel HWSON-8 typ. 0.022 g Package μPA2815T1S-E2-AT ∗1 Note: ∗ 1. Pb-free (This product does not contain Pb in external electrode and o.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet μPA2815T1S P-channel MOSFET –30 V, –21 A, 11 mΩ Description The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0777EJ0101 Rev.1.01 May 28, 2013 Features • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 11 mΩ MAX. (VGS = −10 V, ID = −21 A) • 4.5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free HWSON-8 Ordering Information Part No. Lead Plating Pure Sn Packing Tape 5000 p/reel HWSON-8 typ. 0.022 g Package μPA2815T1S-E2-AT ∗1 Note: ∗ 1. Pb-free (This product does not contain Pb in external electrode and other parts.