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UPA2821T1L - MOS FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit.

Features

  • VDSS = 30 V (TA = 25°C).
  • Low on-state resistance ⎯ RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A).
  • 4.5 V Gate-drive available.
  • Small surface mount package (8-pin HVSON (3333)).
  • Pb-free, Halogen Free Ordering Information Part No. Lead Plating Packing Package μPA2821T1L-E1-AT ∗1 Pure Sn (Tin) Tape 3000 p/reel 8-pin HVSON (3333) μPA2821T1L-E2-AT ∗1 typ. 0.028 g Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other.

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Datasheet Details

Part number UPA2821T1L
Manufacturer Renesas
File Size 138.53 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet UPA2821T1L Datasheet
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Full PDF Text Transcription

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μPA2821T1L MOS FIELD EFFECT TRANSISTOR PreliminaryData Sheet R07DS0753EJ0100 Rev.1.00 May 25, 2012 Description The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features • VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A) • 4.5 V Gate-drive available • Small surface mount package (8-pin HVSON (3333)) • Pb-free, Halogen Free Ordering Information Part No. Lead Plating Packing Package μPA2821T1L-E1-AT ∗1 Pure Sn (Tin) Tape 3000 p/reel 8-pin HVSON (3333) μPA2821T1L-E2-AT ∗1 typ. 0.028 g Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.
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