UPA2826T1S Datasheet PDF - Renesas N-channel MOSFET Specs

UPA2826T1S - N-channel MOSFET

Datasheet Summary

Description

The μ PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment .

Features

VDSS = 20 V (TA = 25°C).
Low on-state resistance ⎯ RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A).
2.5 V Gate-drive available.
Small & thin type surface mount package with heat spreader.
Pb-free and Halogen free HWSON-8 Ordering Information Part No. LEAD.

Datasheet Details

Part number	UPA2826T1S
Manufacturer	Renesas
File Size	232.65 KB
Description	N-channel MOSFET
Datasheet	UPA2826T1S Datasheet
Additional preview pages of the UPA2826T1S datasheet.

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Full PDF Text Transcription

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Data Sheet μPA2826T1S N-channel MOSFET 20 V , 27 A , 4.3 mΩ Description The μ PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment . R07DS0989EJ0100 Rev.1.00 Dec 25, 2012 Features • VDSS = 20 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A) • 2.5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free HWSON-8 Ordering Information Part No. LEAD PLATING Pure Sn(Tin) PACKING Tape 5000 p/reel HWSON-8 0.022 g TYP. Package μ PA2826T1S-E2-AT∗1 Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.

Published: Sep 17, 2013 |