UPA2826T1S Description
The μ PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment . R07DS0989EJ0100 Rev.1.00 Dec 25, 2012.
UPA2826T1S Key Features
- VDSS = 20 V (TA = 25°C)
- Low on-state resistance ⎯ RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A)
- 2.5 V Gate-drive available
- Small & thin type surface mount package with heat spreader
- Pb-free and Halogen free