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UPA2826T1S - N-channel MOSFET

General Description

The μ PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment .

Key Features

  • VDSS = 20 V (TA = 25°C).
  • Low on-state resistance ⎯ RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A).
  • 2.5 V Gate-drive available.
  • Small & thin type surface mount package with heat spreader.
  • Pb-free and Halogen free HWSON-8 Ordering Information Part No. LEAD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet μPA2826T1S N-channel MOSFET 20 V , 27 A , 4.3 mΩ Description The μ PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment . R07DS0989EJ0100 Rev.1.00 Dec 25, 2012 Features • VDSS = 20 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A) • 2.5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free HWSON-8 Ordering Information Part No. LEAD PLATING Pure Sn(Tin) PACKING Tape 5000 p/reel HWSON-8 0.022 g TYP. Package μ PA2826T1S-E2-AT∗1 Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.