Datasheet Details
| Part number | RUH60100M |
|---|---|
| Manufacturer | Ruichips |
| File Size | 403.31 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet |
 RUH60100M Datasheet
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| Part number | RUH60100M |
|---|---|
| Manufacturer | Ruichips |
| File Size | 403.31 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet |
RUH60100M Datasheet
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• 60V/100A, RDS (ON) =2.6mΩ(Typ.)@VGS=10V RDS (ON) =3.6mΩ(Typ.)@VGS=4.5V D D DD • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) SSS G PIN1 PIN1 Applications • LED backlighting yPDFN5060 Onl D • On board power for server • Synchronous rectification Use G Absolute Maximum Ratings Symbol times Parameter S N-Channel MOSFET Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) ng VDSS he VGSS Drain-Source Voltage Gate-Source Voltage s TJ ng TSTG To IS Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C 60 V ±20 150 °C -55 to 150 °C 50 A Mounted on Large Heat Sink For IDP① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ TC=25°C 400 A TC=25°C 100 TC=100°C 63 A TA=25°C 38 TA=70°C 30 Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA③ TC=25°C 126 TC=100°C 50 W TA=25°C 4.2 TA=70°C 2.7 Shenzhen City Ruichips Semiconductor Co., Ltd Rev.
A– MAR., 2017 1 sales.Mr.wang13826508770 www.sztssd.com RUH60100M Symbol Parameter Rating Unit RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings 0.99 30 EAS④ Avalanche Energy, Single Pulsed 506 Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS se VGS(th) U IGSS es RDS(ON)⑤ Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance VGS=4.5V, IDS=35A VGS=10V, IDS=50A tim Diode Characteristics VSD⑤ g trr Diode Forward Voltage Reverse Recovery Time n Qrr Reve
sales.Mr.wang13826508770 www.sztssd.com RUH60100M N-Channel Advanced Power.
| Part Number | Description |
|---|---|
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