RUH60100R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RUH60100R n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RUH60100R
Manufacturer	Ruichips
File Size	435.62 KB
Description	N-Channel Advanced Power MOSFET
Download	RUH60100R Download (PDF)

General Description

Applications • On board power for server • Synchronous rectification GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 60 ±20 175 -55 to 175 75

Overview

RUH60100R N-Channel Advanced Power MOSFET.

Key Features

60V/100A, RDS (ON) =3.3mΩ(Typ. )@VGS=10V RDS (ON) =4.3mΩ(Typ. )@VGS=4.5V.
Ultra Low On-Resistance.
Fast Switching Speed.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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