SW1N80A
SW1N80A is MOSFET manufactured by SEMIPOWER.
SAMWIN
N-channel MOSFET
Features
- High ruggedness
- RDS(ON) (Max 16 Ω)@VGS=10V
- Gate Charge (Max 7n C)
- Improved dv/dt Capability
- 100% Avalanche Tested
TO-92
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
BVDSS : 800V ID : 1.0A RDS(ON) :16ohm
Order Codes
Item 1
Sales Type SW C 1N80A
Marking SW1N80A
Package TO-92
Packaging...
