SEMIPOWER SW1N80A
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.| Part No. | SW1N80A |
|---|---|
| Datasheet | SW1N80A Download |
| Manufacturer |  SEMIPOWER |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● High ruggedness● RDS(ON) (Max 16 Ω)@VGS=10V
● Gate Charge (Max 7nC)
● Improved dv/dt Capability
● 100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3. Source
GENERAL DESCRIPTION
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. BVDSS : 800V ID : 1.0A RDS(ON) :16ohm 2 1 3 Order Codes Item 1 Sales Type SW C 1N80A Marking SW1N80A Package TO-92 Packaging TAPE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to So
