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STP605D - P-Channel Enhancement Mode MOSFET

General Description

STP605D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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Datasheet Details

Part number STP605D
Manufacturer STANSON
File Size 935.38 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP605D Datasheet

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STP605D P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION STP605D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP607D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 FEATURE l -60V/-10.0A, RDS(ON) = 70mΩ（Typ.） @VGS = -10V l -60V/-5.0A, RDS(ON) = 80mΩ（Typ.