STP605D Datasheet PDF

STANSON STP605D

STP605D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP607D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Part No.	STP605D
Datasheet	STP605D Download
Manufacturer	STANSON
Description	P-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

PIN CONFIGURATION (D-PAK) TO-252 FEATURE l -60V/-10.0A, RDS(ON) = 70mΩ（Typ.） @VGS = -10V l -60V/-5.0A, RDS(ON) = 80mΩ（Typ.） @VGS = -10V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252package design PART MARKING STP605D FXGA F：Year Code X：Date Code Q：Process Code A：Wafer Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA . STP607D 2010. V1 STP605D P Channel Enhancement Mode MOSFET -15.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS -60 Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=100℃ VGSS ID IDM ±20 -15.0 -7.0 -30 Continuous Source Current (Diode Conduction) IS -15 Power Dissipation TA=25℃ PD 25 Operation Junction Temperature TJ 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 25 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .