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STP7401
P Channel Enhancement Mode MOSFET
-2.8A
DESCRIPTION
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-323 (SC-70)
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING SOT-323
FEATURE
z -30V/-2.8A, RDS(ON) = 115mΩ @VGS = -10V
z -30V/-2.5A, RDS(ON) = 135mΩ @VGS = -4.5V
z -30V/-1.5A, RDS(ON) = 170mΩ @VGS = -2.5V
z -30V/-1.