STP7401 Datasheet | STANSON

P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-323 (SC-70) 1.Gate 2.Source 3.Drain PART MARKING SOT-323 FEATURE z -30V/-2.8A, RDS(ON) = 115mΩ @VGS = -10V z -30V/-2.5A, RDS(ON) = 135mΩ @VGS = -4.5V z -30V/-1.5A, RDS(ON) = 170mΩ @VGS = -2.5V z -30V/-1.0A, RDS(ON) = 240mΩ @VGS = -1.8V z Super high density cell design for Extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-323 (SC-70) package design 01YW Y: Year Code A: Process Code ORDERING INFORMATION Part Number Package Part Marking STP7401S32RG SOT-323 01YW ※ Process Code : A ~ Z ; a ~ z ※ ST7401S32RG S32 : SOT-23-3L ; R : Tape Reel ; G : Pb - Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. STP7401 2005. V1 P Channel Enhancement Mode MOSFET -2.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ=150℃) TA=25℃...