STMicroelectronics RF2L42008CG2
The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical modulation formats.| Part No. | RF2L42008CG2 |
|---|---|
| Datasheet | RF2L42008CG2 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code Frequency VDD POUT Gain Efficiency RF2L42008CG2 3600 MHz 28 V 8W 14.5 dB 47%● High efficiency and linear gain operations
● Integrated ESD protection
● Internally matched for ease of use
● Large positive and negative gate-source voltage range for improved class C operation
● Excellent thermal stability, low HCI drift
● In compliance with the European directive 2002/95/EC
APPLICATIONS
● Telecom and wideband communications● Avionics and radar
● 2.45 GHz industrial
DESCRIPTION
Product status link RF2L42008CG2 Product summary Order code RF2L42008CG2 Marking 2L42008 Package E2 Packing Tape and reel 13" Base/bulk quantity 300/300 DS13240 - Rev 3 - September 2021 For further information contact your local STMicroelectronics sales office. RF2L42008CG2 Electrical ratings 1 Electrical ratings Symbol V(BR)DSS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table 2.
