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RF2L42008CG2 Datasheet RF power LDMOS transistor

Manufacturer: STMicroelectronics

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General Description

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz.

It can be used in class AB, B or C for all typical modulation formats.

Product status link RF2L42008CG2 Product summary Order code RF2L42008CG2 Marking 2L42008 Package E2 Packing Tape and reel 13" Base/bulk quantity 300/300 DS13240 - Rev 3 - September 2021 For further information contact your local STMicroelectronics sales office.

Overview

RF2L42008CG2 Datasheet 8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor 1 3 2 E2 Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF2L42008CG2 3600 MHz 28 V 8W 14.5 dB 47%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched for ease of use.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the European directive 2002/95/EC.

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