SGSP341
SGSP341 is N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR manufactured by STMicroelectronics.
/ T 7 SCS-THOMSON
[- 03(m i(gra Ki(g S
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE SGSP341
V DSS 400 V
^DS(on) 20 n b 0.6 A
- HIGH SPEED SWITCHING APPLICATIONS
- ULTRA FAST SWITCHING
- EASY DRIVE FOR REDUCED COST AND SIZE
INDUSTRIAL APPLICATIONS:
- GENERAL PURPOSE
- channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switch
TO-220 ing times make this POWER MOS transistor ideal for high speed switching applications. Typical ap plications include motor starter and drive circuits for power bipolar transistors.
INTERNAL SCHEMATIC
°
DIAGRAM
ABSOLUTE MAXIMUM RATINGS
V DS V dgr V GS b b
- dm (- )
- dlm O Plot
T tg Ti
Drain-source voltage (VGS= 0) Drain-gate voltage (RGS= 20 KQ) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc = 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc < 2 5 °C Derating factor Storage temperature Max. operating junction temperature
(- ) Pulse width limited by safe operating area
June 1988
400 400 ±20 0.6 0.4
1 .2
1.2 18 0.14
- 6 5 to 150 150
V V V A A A A W W /°C °C °C
1/5
THERMAL DATA
Rthj . Case Thermal resistance junction-case
Maximum lead temperature for soldering purpose...
