Full PDF Text Transcription for SGSP341 (Reference)
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SGSP341. For precise diagrams, and layout, please refer to the original PDF.
/ T 7 SCS-THOMSON [*03(m i(graKi(gS SGSP341 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP341 V DSS 400 V ^DS(on) 20 n b 0.6 A • HIGH SPEED SWITCHING APPLICA...
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GSP341 V DSS 400 V ^DS(on) 20 n b 0.6 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • GENERAL PURPOSE N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switch TO-220 ing times make this POWER MOS transistor ideal for high speed switching applications. Typical ap plications include motor starter and drive circuits for power bipolar transistors. INTERNAL SCHEMATIC ° DIAGRAM GOS ABSOLUTE MAXIMUM RATINGS V DS V dgr V GS b b *dm (*) •dlm O Plot T tg Ti Drain-source voltage (VGS= 0) Drain-gate voltage (RGS= 20
SGSP341 Datasheet
