STMicroelectronics SGSP341
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
| Part No. | SGSP341 |
|---|---|
| Datasheet | SGSP341 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● ULTRA FAST SWITCHING● EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● GENERAL PURPOSE N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switch TO-220 ing times make this POWER MOS transistor ideal for high speed switching applications. Typical ap plications include motor starter and drive circuits for power bipolar transistors. INTERNAL SCHEMATIC ° DIAGRAM GOS
ABSOLUTE MAXIMUM RATINGS
V DS V dgr V GS b b *dm (*)●dlm O Plot T tg Ti Drain-source voltage (VGS= 0) Drain-gate voltage (RGS= 20 KQ) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc = 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc < 2 5 °C Derating factor Storage temperature Max. operating junction temperature (*) Pulse width limited by safe operating area June 1988 400 400 ±20 0.6 0.4 1 .2 1.2 18 0.14 - 6 5 to 150 150 V V V A A A A W W /°C °C °C 1/5 SGSP341 THERMAL DATA Rthj . Case T...
