STMicroelectronics STB6NM60N
N-channel Power MOSFET
| Part No. | STB6NM60N |
|---|---|
| Datasheet | STB6NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS (@Tjmax) RDS(on) max ID STB6NM60N t(s)STD6NM60N cSTD6NM60N-1 uSTF6NM60N rodSTP6NM60N 650 V 650 V 650 V 650 V 650 V < 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω 4.6 A 4.6 A 4.6 A 4.6 A (1) 4.6 A P1. Limited only by maximum temperature allowed te● 100% avalanche tested le● Low input capacitance and gate charge so● Low gate input resistance ObApplication ) -● Switching applications ct(sDescription duThis series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power MOSFET associates a new tevertical structure to the STMicroelectronics’ strip lelayout to yield one of the world’s lowest on- resistance and gate charge. It is therefore suitable sofor the most demanding high-efficiency Obconverters. 3 2 1 TO-220 3 1 DPAK 3 1 D²PAK 3 2 1 TO-220FP IPAK 3 2 1 Figure 1. Internal schematic diagram $
