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STB6NM60N - N-channel Power MOSFET

General Description

duThis series of devices implements second rogeneration MDmesh™ technology.

resistance and gate charge.

Key Features

  • Type VDSS (@Tjmax) RDS(on) max ID STB6NM60N t(s)STD6NM60N cSTD6NM60N-1 uSTF6NM60N rodSTP6NM60N 650 V 650 V 650 V 650 V 650 V < 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω 4.6 A 4.6 A 4.6 A 4.6 A (1) 4.6 A P1. Limited only by maximum temperature allowed te.
  • 100% avalanche tested le.
  • Low input capacitance and gate charge so.
  • Low gate input resistance Ob.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS (@Tjmax) RDS(on) max ID STB6NM60N t(s)STD6NM60N cSTD6NM60N-1 uSTF6NM60N rodSTP6NM60N 650 V 650 V 650 V 650 V 650 V < 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω 4.6 A 4.6 A 4.6 A 4.6 A (1) 4.6 A P1. Limited only by maximum temperature allowed te■ 100% avalanche tested le■ Low input capacitance and gate charge so■ Low gate input resistance ObApplication ) -■ Switching applications ct(sDescription duThis series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power MOSFET associates a new tevertical structure to the STMicroelectronics’ strip lelayout to yield one of the world’s lowest on- resistance and gate charge.