STB6NM60N
STB6NM60N is N-channel Power MOSFET manufactured by STMicroelectronics.
ures
Type
VDSS (@Tjmax)
RDS(on) max
STB6NM60N t(s)STD6NM60N c STD6NM60N-1 u STF6NM60N rod STP6NM60N
650 V 650 V 650 V 650 V 650 V
< 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω < 0.92 Ω
4.6 A 4.6 A 4.6 A 4.6 A (1) 4.6 A
P1. Limited only by maximum temperature allowed te- 100% avalanche tested le- Low input capacitance and gate charge so- Low gate input resistance
Ob Application
) -- Switching applications ct(s Description du This series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power MOSFET associates a new tevertical structure to the STMicroelectronics’ strip lelayout to yield one of the world’s lowest on- resistance and gate charge. It is therefore suitable sofor the most demanding high-efficiency Obconverters.
3 2 1
TO-220
3 1
DPAK
3 1
D²PAK
3 2 1
TO-220FP
IPAK
2 1
Figure 1. Internal schematic...
