STMicroelectronics STGW75M65DF2
The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the lowloss and the short-circuit functionality are essential.| Part No. | STGW75M65DF2 |
|---|---|
| Datasheet | STGW75M65DF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 75A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● 6 μs of minimum short-circuit withstand time
● VCE(sat) = 1.65 V (typ.) @ IC = 75 A
● Tight parameter distribution
● Safer paralleling
● Positive VCE(sat) temperature coefficient
● Low thermal resistance
● Soft and very fast-recovery antiparallel diode
APPLICATIONS
● Motor control● UPS
● PFC
● General purpose inverter
DESCRIPTION
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status links STGW75M65DF2 STGWA75M65DF2 Product summary Order code STGW75M65DF2 Marking G75M65DF2 Package TO-247 Packing Tube Order code STGWA75M65DF2 Marking G75M65DF2 Package TO-247 long leads Packing Tube DS11403 - Rev 4 - January 2025 For further information, contact your local STMicroelectronics sales office. STGW75M65DF2, STGWA75M65DF2 Electrical ratings 1 Electrical ratings Table 1.
