Datasheet4U Logo Datasheet4U.com

STGW75M65DF2 Datasheet IGBT

Manufacturer: STMicroelectronics

Overview: STGW75M65DF2, STGWA75M65DF2 Trench gate field-stop IGBT, M series 650 V, 75 A low loss Datasheet - production data Figure 1: Internal schematic.

General Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.

Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key Features

  • 6 µs of short-circuit withstand time.
  • VCE(sat) = 1.65 V (typ. ) @ IC = 75 A.
  • Tight parameter distribution.
  • Safer paralleling.
  • Low thermal resistance.
  • Soft and very fast recovery antiparallel diode.

STGW75M65DF2 Distributor