STH2N120K5-2AG Datasheet | STMicroelectronics

Automotive-grade N-channel 1200 V, 7.25 Ω typ., 1.5 A, MDmesh K5 Power MOSFET in an H²PAK-2 package 23 1 H2PAK-2 D(TAB) Features Order code STH2N120K5-2AG VDS 1200 V RDS(on) max. 10 Ω - AEC-Q101 qualified - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested ID 1.5 A PTOT 60 W G(1) S(2, 3) Applications - Switching applications DTG1S23NZ Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status STH2N120K5-2AG Product summary(1) Order code Marking 2N120K5 Package H²PAK-2 Packing Tape and reel 1. HTRB test was performed at 80% of V(BR)DSS according to AEC-Q101 rev. C. All other tests were performed according to AEC-Q101 rev....