STH2N120K5-2AG Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. HTRB test was performed at 80% of V(BR)DSS according to AEC-Q101 rev.
STH2N120K5-2AG Key Features
- AEC-Q101 qualified
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested