STL6P3LLH6 Datasheet | STMicroelectronics

P-channel 30 V, 24 mΩ typ., 6 A STrip FET H6 Power MOSFET in a Power FLAT 3.3 x 3.3 package D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code 30 V - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss RDS(on) max. 30 mΩ ID 6A PTOT 2.9 W Applications - Switching applications Description This device is a P-channel Power MOSFET developed using the STrip FET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. AM01475v4 Product status link STL6P3LLH6 Product summary Order code Marking Package Packing 6P3L Power FLAT 3.3 x 3.3 Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS9257 - Rev 4 - March 2020 For further information contact your local STMicroelectronics sales...