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STP12NM60N Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.

General Description

This series of devices implements second generation MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency converters.

Key Features

  • www. DataSheet4U. com Type VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω ID 1 3 3 12 STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N 10A 10A 10A(1) 10A 10A D²PAK I²PAK TO-247 3 1 2 3 1 2 1. Limited only by maximum temperature allowed.
  • 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Internal schematic diagram.

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