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STU12N60M2 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order code STU12N60M2 VDS 600 V RDS(on) max. 0.450 Ω ID PTOT 9 A 85 W.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STU12N60M2 N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2 Power MOSFET in an IPAK package Datasheet - production data TAB IPAK 3 2 1 Figure 1: Internal schematic diagram Features Order code STU12N60M2 VDS 600 V RDS(on) max. 0.450 Ω ID PTOT 9 A 85 W • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.