STMicroelectronics STU150N3LLH6
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.| Part No. | STU150N3LLH6 |
|---|---|
| Datasheet | STU150N3LLH6 Download |
| Manufacturer |  STMicroelectronics |
| Description | 30V 80A N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
Type STD150N3LLH6 STP150N3LLH6 STu150N3LLH6●
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● VDSS 30 V 30 V 30 V RDS(on) max 0.0028 Ω 0.0033 Ω 0.0033 Ω ID 80 A 80 A 80 A 3 1 3 2 1 DPAK IPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 1 2 3 TO-220 Application
● Switching applications Figure 1. Internal schematic diagram $ 4!" OR
DESCRIPTION
' 3 !- V Table 1. Device summary Marking 150N3LLH6 150N3LLH6 150N3LLH6 Package DPAK TO-220 IPAK Packaging Tape and reel Tube Tube Order codes STD150N3LLH6 STP150N3LLH6 STU150N3LLH6 September 2009 Doc ID 15227 Rev 3 1/16 16 Free Datasheet Contents STD150N3LLH6, STP150N3LLH6, STU150N3LLH6 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 4 5 6 Test circuit ...............................................
