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STU1HN60K3 - N-CHANNEL POWER MOSFET

Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Features

  • Order codes VDS STD1HN60K3 600 V STU1HN60K3 RDS(on) max 8Ω ID PTOT 1.2 A 27 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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Datasheet preview – STU1HN60K3

Datasheet Details

Part number STU1HN60K3
Manufacturer STMicroelectronics
File Size 797.12 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STU1HN60K3 Datasheet
Additional preview pages of the STU1HN60K3 datasheet.

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Full PDF Text Transcription

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STD1HN60K3, STU1HN60K3 N-channel 600 V, 6.7 Ω typ., 1.2 A SuperMESH3™ Power MOSFET in DPAK and IPAK packages Datasheet − production data TAB 3 1 DPAK TAB IPAK 3 2 1 Figure 1. Internal schematic diagram D(2, TAB) Features Order codes VDS STD1HN60K3 600 V STU1HN60K3 RDS(on) max 8Ω ID PTOT 1.2 A 27 W • 100% avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • Switching applications G(1) S(3) AM01476v1 Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
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