STMicroelectronics STU1HN60K3
This is information on a product in full production.| Part No. | STU1HN60K3 |
|---|---|
| Datasheet | STU1HN60K3 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDS STD1HN60K3 600 V STU1HN60K3 RDS(on) max 8Ω ID PTOT 1.2 A 27 W● 100% avalanche tested
● Extremely high dv/dt capability
● Gate charge minimized
● Very low intrinsic capacitance
● Improved diode reverse recovery characteristics
● Zener-protected
APPLICATIONS
● Switching applications G(1) S(3) AM01476v1DESCRIPTION
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Order codes STD1HN60K3 STU1HN60K3 Table 1. Device summary Marking Package 1HN60K3 DPAK IPAK Packaging Tape and reel Tube April 2013 DocID024422 Rev 1 1/19 19 Contents Contents STD1HN60K3, STU1HN60K3 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
