SGK0910-120A-R Datasheet | SUMITOMO

FEATURES - High Output Power: P5d B=51.0d Bm (Typ.) - High Gain: GL=11.5d B (Typ.) - High P.A.E.: add=35% (Typ.) - Broad Band: 9.2 to 10.0GHz - Impedance Matched Zin/Zout = 50ohm - Hermetically Sealed Package DESCRIPTION The SGK0910-120A-R is a high power Ga N-HEMT that is internally matched for X-band radar bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C) Item Symbol Rating Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Tstg Channel Temperature Tch 26 -10 265 -55 to +125 +250 REMENDED OPERATING CONDITION Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR Tch Condition Rg=25ohm Rg=25ohm Limit <=24 <=30.4 >=-12.8 <+192 Unit V V W deg.C deg.C Unit V m A m A deg.C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C) Item Saturated Drain Current Trans Conductance Pinch-off Voltage Output Power at 5d B G.C.P. Linear Gain at Pin=29.5d Bm Drain Current at 5d B G.C.P. Power Added Efficiency at 3d B G.C.P. Gain Flatness Thermal Resistance Symbol Condition IDSS Gm VP P5d B GL IDSR add G Rth VDS=10v, VGS=0v VDS=24V, IDS=5.3A VDS=24V, IDS=5.3m A VDS=24V(Typ.) IDS(DC)=5.3A(Typ.) Pulse Width=100usec. Duty=10% f=9.2 to 10.0 GHz Channel to...