SGK5872-20A Datasheet | SUMITOMO

FEATURES - High Output Power: P5d B=43.0d Bm (Typ.) - High Gain: GL=12.0 to 13.0d B (Typ.) - High Power Added Efficiency: PAE=41% (Typ.) - Broad Band: 5.85 to 7.2GHz - Internally Matched - Plastic Package for SMT applications DESCRIPTION The SGK5872-20A is a high power Ga N-HEMT that is internally matched for standard munication bands to provide optimum power and linearity. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Input Power Symbol VDS VGS PT Tstg Tch Pin Rating 26 -10 48 -40 to +125 +250 38 REMENDED OPERATING CONDITION Item Drain-Source Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR Tch Condition Rg=100ohm Rg=100ohm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C) Limit <=24 <=4.0 >=-1.9 <+192 Unit V V W deg.C deg.C d Bm Unit V m A m A deg.C Item Saturated Drain Current Trans Conductance Pinch-off Voltage Frequency Range Output Power at 5d B G.C.P. Linear Gain at Pin=20d Bm Drain Current at 5d B G.C.P. Power Added Efficiency at 3d B G.C.P. 3rd Order Inter modulation Distortion Thermal Resistance Channel Temperature Rise Symbol IDSS Gm VP f P5d B GL IDSR PAE IM3 Rth Tch Condition Limit Min. Typ. Max. Unit VDS=10V, VGS=0V VDS=24V, IDS=0.8A - 1.8 -...