SGK7785-30A Datasheet | SUMITOMO

FEATURES - High Output Power: P5d B=45.0d Bm (Typ.) - High Gain: GL=12.0d B (Typ.) - High PAE: add=39% (Typ.) - Broad Band: 7.7 to 8.5GHz - Impedance Matched Zin/Zout = 50ohm - Hermetically Sealed Package DESCRIPTION The SGK7785-30A is a high power Ga N-HEMT that is internally matched for standard munication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT TSTG TCH Rating 26 -10 86.5 -55 to +125 +250 REMENDED OPERATING CONDITION Item Drain-Source Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR TCH Condition Rg=100ohm Rg=100ohm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C) Limit <=24 <=6 >=-3 <+192 Unit V V W deg.C deg.C Unit V m A m A deg.C Item Saturated Drain Current Trans Conductance Pinch-off Voltage Output Power at 5d B G.C.P. Linear Gain at Pin=23d Bm Drain Current at 5d B G.C.P. Power Added Efficiency at 3d B G.C.P. Gain Flatness 3rd Order Inter modulation Distortion Thermal Resistance Channel Temperature Rise Symbol Idss gm VP P5d B GL Idsr add G IM3 Rth Tch Condition Limit Min. Typ. Max. Unit Vds=10V, Vgs=0V Vds=24V, Ids=1.3A - 3.0 - S Vds=10V, Ids=1.3m A -...