K4S160822D datasheet by Samsung Semiconductor.
| Part number | K4S160822D |
|---|---|
| Datasheet | K4S160822D_Samsungsemiconductor.pdf |
| File Size | 1.16 MB |
| Manufacturer | Samsung Semiconductor |
| Description | 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
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The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be...
View all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K4S161622D | 512K x 16Bit x 2 Banks Synchronous DRAM |
| K4S161622E | 1M x 16 SDRAM |
| K4S161622H | 16Mb H-die SDRAM Specification |
| K4S1G0732B-TC75 | SDRAM stacked 1Gb B-die |
| K4S280432A | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S280432B | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S280432C | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S280432D | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S280432E | 128Mb E-die SDRAM Specification |
| K4S280432E-TC75 | 128Mb E-die SDRAM Specification |
