Samsung semiconductor K4S160822D
The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology.| Part No. | K4S160822D |
|---|---|
| Datasheet | K4S160822D Download |
| Manufacturer |  Samsung semiconductor |
| Description | 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
| Buy | Stock & Price |
FEATURES
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● JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS latency ( 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle(2K/32ms) CMOS SDRAM
GENERAL DESCRIPTION
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.●
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● ORDERING INFORMATION Part No. K4S160822DT-G/F7 K4S160822DT-G/F8 K4S160822DT-G/FH K4S160822DT-G/FL K4S160822DT-G/F10 Max Freq. 143MHz 125MHz 100MHz 100MHz 100MHz LVTTL 44 TSOP(II) Interface Package FU...
