K4S160822D - 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S160822D
Manufacturer	Samsung semiconductor
File Size	1.16 MB
Description	2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
Datasheet	K4S160822D Datasheet
Additional preview pages of the K4S160822D datasheet.

Product details

Description

The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS latency ( 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle(2K/32ms) CMOS SDRAM.

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Other Datasheets by Samsung semiconductor

K4S161622D - 512K x 16Bit x 2 Banks Synchronous DRAM
K4S161622E - 1M x 16 SDRAM
K4S161622H - 16Mb H-die SDRAM Specification
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Published: Apr 7, 2005 |