K4S161622D - 512K x 16Bit x 2 Banks Synchronous DRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S161622D
Manufacturer	Samsung semiconductor
File Size	1.10 MB
Description	512K x 16Bit x 2 Banks Synchronous DRAM
Datasheet	K4S161622D Datasheet
Additional preview pages of the K4S161622D datasheet.

Product details

Description

The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle (2K/32ms) CMOS SDRAM.

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Other Datasheets by Samsung semiconductor

K4S161622E - 1M x 16 SDRAM
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K4S160822D - 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
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Published: Apr 7, 2005 |