Datasheet4U Logo Datasheet4U.com

K4S161622D Datasheet 512k X 16bit X 2 Banks Synchronous Dram

Manufacturer: Samsung Semiconductor

Overview: K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM.

General Description

The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Key Features

  • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle (2K/32ms) CMOS SDRAM.

More Datasheets from Samsung Semiconductor

Part Number Description
K4S161622E 1M x 16 SDRAM
K4S161622H 16Mb H-die SDRAM Specification
K4S160822D 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
K4S1G0732B-TC75 SDRAM stacked 1Gb B-die
K4S280432A 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432B 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432C 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432D 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432E 128Mb E-die SDRAM Specification
K4S280432E-TC75 128Mb E-die SDRAM Specification

K4S161622D Distributor