K4S161622E - 1M x 16 SDRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S161622E
Manufacturer	Samsung semiconductor
File Size	675.26 KB
Description	1M x 16 SDRAM
Datasheet	K4S161622E Datasheet
Note	This datasheet PDF includes multiple part numbers: K4S161622E, K4S. Please refer to the document for exact specifications by model.
Additional preview pages of the K4S161622E datasheet.

Product details

Description

The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle (2K/32ms) CMOS SDRAM.

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Published: Apr 7, 2005 |