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K4S161622H Datasheet 16mb H-die Sdram Specification

Manufacturer: Samsung Semiconductor

Overview: SDRAM 16Mb H-die(x16) CMOS SDRAM 16Mb H-die SDRAM Specification Revision 1.5 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 August 2004 SDRAM 16Mb H-die(x16) Revision History Revision 0.0 (May, 2003) - Target spec release. Revision 0.1 (October, 2003) - Modified tRDL from 1CLK to 2CLK. Revision 0.2 (October, 2003) - Deleted AC parameter notes 5. Revision 0.3 (October, 2003) - Modified tRDL & deleted speed 200MHz. Revision 1.0 (November, 2003) - Revision 1.0 spec. release. Revision 1.1 (December, 2003) - Corrected PKG dimension. Revision 1.2 (January, 2004) - Deleted -10(10ns) speed. - Modified load cap 50pF -> 30pF. - Modified DC current . Revision 1.3 (January, 2004) - Corrected typo Revision 1.4 (May, 2004) - Added Note 8. sentense of tRDL parameter. CMOS SDRAM Revision 1.5 (August, 2004) - Modified CLK cycle time(tcc) parameter in AC Characteristics. ( If you want use of CL=2 not CL=3, the maximum operating frequency is 100MHz regardless of its speed bin.) Rev. 1.

General Description

The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/ O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be use

Key Features

  • 3.3V power supply LVTTL compatible with multiplexed address two banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 32ms refresh period (2K cycle) CMOS SDRAM.

More Datasheets from Samsung Semiconductor

Part Number Description
K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM
K4S161622E 1M x 16 SDRAM
K4S160822D 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
K4S1G0732B-TC75 SDRAM stacked 1Gb B-die
K4S280432A 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432B 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432C 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432D 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S280432E 128Mb E-die SDRAM Specification
K4S280432E-TC75 128Mb E-die SDRAM Specification

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