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K4S1G0732B-TC75

K4S1G0732B-TC75 is SDRAM stacked 1Gb B-die manufactured by Samsung Semiconductor.
K4S1G0732B-TC75 datasheet preview

K4S1G0732B-TC75 Datasheet

Part number K4S1G0732B-TC75
Download K4S1G0732B-TC75 Datasheet (PDF)
File Size 126.67 KB
Manufacturer Samsung Semiconductor
Description SDRAM stacked 1Gb B-die
K4S1G0732B-TC75 page 2 K4S1G0732B-TC75 page 3

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K4S1G0732B-TC75 Distributor

K4S1G0732B-TC75 Description

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No.

K4S1G0732B-TC75 Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Inte
  • All inputs are sampled at the positive going edge of the system clock
  • Burst read single-bit write operation
  • DQM for masking
  • Auto & self refresh
  • 64ms refresh period (8K Cycle)

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