Datasheet Summary
SDRAM stacked 1Gb B-die (x8)
CMOS SDRAM stacked 1Gb B-die SDRAM Specification
Revision 1.1 February 2004
- Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.1 February 2004
SDRAM stacked 1Gb B-die (x8)
Revision History
Revision 1.0 (August, 2003)
- First release. Revision 1.1 (February, 2004) -Corrected typo.
CMOS SDRAM
Rev. 1.1 February 2004
SDRAM stacked 1Gb B-die (x8)
32M x 8Bit x 4 Banks Synchronous DRAM
Features
- JEDEC standard 3.3V power supply
- LVTTL patible with multiplexed address
- Four banks operation
- MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential &...