K4S1G0732B-TC75 - SDRAM stacked 1Gb B-die

This page provides the datasheet information for the K4S1G0732B-TC75, a member of the K4S1G0732B SDRAM stacked 1Gb B-die family.

Product Overview

Samsung semiconductor

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Datasheet Details

Part number	K4S1G0732B-TC75
Manufacturer	Samsung semiconductor
File Size	126.67 KB
Description	SDRAM stacked 1Gb B-die
Datasheet	K4S1G0732B-TC75 Datasheet
Additional preview pages of the K4S1G0732B-TC75 datasheet.

K4S1G0732B-TC75 Product details

Description

The K4S1G0732B is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (8K Cycle) CMOS SDRA.

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Published: Dec 23, 2005 |