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K4S1G0732B-TC75 Datasheet Sdram Stacked 1gb B-die

Manufacturer: Samsung Semiconductor

Overview: SDRAM stacked 1Gb B-die (x8) CMOS SDRAM stacked 1Gb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM stacked 1Gb B-die (x8) Revision History Revision 1.0 (August, 2003) - First release. Revision 1.1 (February, 2004) -Corrected typo. CMOS SDRAM Rev. 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The K4S1G0732B is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (8K Cycle) CMOS SDRA.

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