Overview: Rev. 1.01, May. 2010 K4H560438N K4H560838N K4H561638N 256Mb N-die DDR SDRAM
66TSOP-(II) with Lead-Free & Halogen-Free (RoHS pliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved. -1- K4H560438N K4H560838N K4H561638N datasheet
History - First Release - Corrected Typo. Draft Date Apr. 2010 May. 2010 Rev. 1.01 DDR SDRAM Revision History
Revision No. 1.0 1.01 Remark Editor S.H.Kim S.H.Kim -2- K4H560438N K4H560838N K4H561638N datasheet Rev. 1.01 DDR SDRAM Table Of Contents
256Mb N-die DDR SDRAM
1.
