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1SS351 - Sillicon Epitaxial Schottky Barrier Diode

Key Features

  • Series connection of 2 elements in a small-sized package facilitates high-density mounting and permits 1SS351-applied equipment to be made smaller.
  • Small interterminal capacitance (C=0.69pF typ).
  • Small forward voltage (VF=0.23V max). Package Dimensions unit:mm 1147A [1SS351] 1:Anode 2:Cathode 3:Anode, Cathode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Forward Current Junction Temperature Storage Temperature Symbol VRM IF Tj T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number :EN3240B 1SS351 Sillicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features · Series connection of 2 elements in a small-sized package facilitates high-density mounting and permits 1SS351-applied equipment to be made smaller. · Small interterminal capacitance (C=0.69pF typ). · Small forward voltage (VF=0.23V max).