The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number :EN3156A
1SS350
Sillicon Epitaxial Schottky Barrier Diode
UHF Detector, Mixer Applications
Features
· Small interterminal capacitance (C=0.69pF typ). · Low forward voltage (VF=0.23V max). · Very small-sized package permitting the 1SS350applied sets to be made small and slim.
Package Dimensions
unit:mm 1148A
[1SS350]
1:Anode 2:No contact 3:Cathode SANYO:CP
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Peak Reverse Voltage Forward Current Junction Temperature Storage Temperature Symbol VRM IF Tj Tstg Conditions Ratings 5 30 125 –55 to +125 Unit V mA
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Forward Voltage Forward Current Reverse Current Interterminal Capacitance Symbol VF IF IR C IF=1mA VF=0.5V VR=0.5V VR=0.2V, f=1MHz 30 25 0.69 0.