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1SS350 - Sillicon Epitaxial Schottky Barrier Diode

Key Features

  • Small interterminal capacitance (C=0.69pF typ).
  • Low forward voltage (VF=0.23V max).
  • Very small-sized package permitting the 1SS350applied sets to be made small and slim. Package Dimensions unit:mm 1148A [1SS350] 1:Anode 2:No contact 3:Cathode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Forward Current Junction Temperature Storage Temperature Symbol VRM IF Tj Tstg Conditions Ratings 5 30 125.
  • 55 to +125 Unit V mA ˚C ˚C.

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Ordering number :EN3156A 1SS350 Sillicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features · Small interterminal capacitance (C=0.69pF typ). · Low forward voltage (VF=0.23V max). · Very small-sized package permitting the 1SS350applied sets to be made small and slim. Package Dimensions unit:mm 1148A [1SS350] 1:Anode 2:No contact 3:Cathode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Forward Current Junction Temperature Storage Temperature Symbol VRM IF Tj Tstg Conditions Ratings 5 30 125 –55 to +125 Unit V mA ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Forward Voltage Forward Current Reverse Current Interterminal Capacitance Symbol VF IF IR C IF=1mA VF=0.5V VR=0.5V VR=0.2V, f=1MHz 30 25 0.69 0.