Datasheet4U Logo Datasheet4U.com

2SA1353 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • High breakdown voltage : VCEO≤300V.
  • Excellent high frequency characteristics : Cre=1.8pF(typ).
  • Adoption of MBIT process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1353 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1350 Silicon PNP Epitaxial Transistor Hitachi Semiconductor
2SA1352 Silicon PNP Power Transistor Inchange Semiconductor
2SA1355 SILICON POWER TRANSISTOR SavantIC
2SA1355 POWER TRANSISTOR Inchange Semiconductor
2SA1356 Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SA1352 PNP/NPN Epitaxial Planar Silicon Transistors
2SA1317 PNP/NPN Epitaxial Planar Silicon Transistors
2SA1318 PNP/NPN Silicon Transistor
2SA1319 PNP/NPN Epitaxial Planar Silicon Transistors
2SA1331 PNP/NPN Epitaxial Planar Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:ENN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications Applications · Ultrahigh-definition CRT display. · Color TV chroma output, high-voltage driver applications. Package Dimensions unit:mm 2009B [2SA1353/2SC3417] 8.0 4.0 2.7 Features · High breakdown voltage : VCEO≤300V. · Excellent high frequency characteristics : Cre=1.8pF(typ). · Adoption of MBIT process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1353 2.4 4.