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2SA1352 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • High breakdown voltage : VCEO≤200V.
  • Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.2pF (NPN), 1.7pF (PNP).
  • Adoption of FBET process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1352 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature St.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SA1353 PNP/NPN Epitaxial Planar Silicon Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number:ENN1411C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1352/2SC3416 Ultrahigh-Definition CRT Display Video Output Applications Applications · Color TV chroma output, high-voltage driver applicatons. Package Dimensions unit:mm 2009B [2SA1352/2SC3416] 8.0 4.0 2.7 Features · High breakdown voltage : VCEO≤200V. · Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1352 2.4 4.